14 Mar 2023, 13:37 UTC≈1,540 views4 reactionsread 7 August 2026 My latest ISI paper with Dr. Saeid Mohammadi entitled: Switching performance assessment of gate-all-around InAs–Si vertical TFET with a triple metal gate, a simulation study
💢 Journal: Nanoscale Research Letters
🔅 From the collection of Springer
📶 Journal Impact Factor: 5.41
🗓 Year: 2023
💬 Scopus Quartile of Journal: Q1
https://link.springer.com/article/10.1186/s11671-023-03816-6
🔥4
Signed dariush_69
10 Feb 2023, 08:35 UTC≈1,290 viewsread 7 August 2026 My latest ISI paper with Mr. Seyed Mohammad Hosein Jafari, and Dr. Orouji entiteled: A Modulation Electric Field Technique to Improve the LD-MOSFET Performance with a P-type Ga2O3 Pocket
💢 Journal: Silicon Journal
🔅 From the collection of Springer
📶 Journal Impact Factor: 2.941
🗓 Year: 2023
💬 Scopus Quartile of Journal: Q2
https://link.springer.com/article/10.1007/s12633-023-02326-5
Signed dariush_69
10 Feb 2023, 08:30 UTC≈1,090 views1 reactionsread 7 August 2026 My latest ISI paper with Dr. Saeid Mohammadi entiteled: Junction-less SOI FET with an Embedded p+ Layer: Investigation of DC, RF, and Negative Capacitance Characteristics
💢 Journal: Silicon Journal
🔅 From the collection of Springer
📶 Journal Impact Factor: 2.941
🗓 Year: 2023
💬 Scopus Quartile of Journal: Q2
https://link.springer.com/article/10.1007/s12633-023-02315-8
👍1
Signed dariush_69
9 Jan 2023, 14:51 UTC732 viewsread 7 August 2026 File
s10854-022-09565-z.pdf
Signed dariush_69
9 Jan 2023, 14:44 UTC≈1,160 viewsread 7 August 2026 My latest ISI paper with Dr. Gharibshahian, and professor orouji entiteled: High-performance α-FAPbI3 perovskite solar cells with an optimized interface energy band alignment by a Zn(O,S) electron transport layer
💢 Journal: Journal of Materials Science: Materials in Electronics
🔅 From the collection of Springer
📶 Journal Impact Factor: 2.78
🗓 Year: 2023
💬 Quartile of Journal: Q2
https://link.springer.com/article/1…
Signed dariush_69
22 Dec 2022, 07:13 UTC≈1,320 views4 reactionsread 7 August 2026 My latest ISI article entiteled: Investigation of Junctionless Fin-FET Characterization in Deep Cryogenic Temperature: DC and RF analysis
💢 Journal: IEEE Access
🔅 From the collection of IEEE
📶 Journal Impact Factor: 3.48
🗓 Year: 2022
💬 Quartile of Journal: Q1
https://ieeexplore.ieee.org/document/9978291
👍4
Signed dariush_69
24 Mar 2022, 14:52 UTC≈2,600 views5 reactionsread 7 August 2026 🌀 #Paper introduction
My latest ISI article in collaboration with Professor Ali Asghar Orouji from Semnan University
💢 Journal: Physica Status Solidi (A) Applications and Materials
🔅 From the collection of Wiley Publications
📶 Journal Impact Factor: 1.981
🗓 Year: 2022
💬 Quartile of Journal: Q2
Stacked Single Gate SOI 4H-SiC Junctionless FET with a Buried P-type 4H-SiC layer
Free Link : Free Link
👍5
Signed dariush_69
3 Feb 2022, 06:58 UTC933 views3 reactionsread 7 August 2026 🌀 #معرفی_مقاله
جدیدترین مقاله بنده با همکاری پروفسور علی اصغر اروجی و آقای فرشاد قلی پور از دانشگاه سمنان
💢 ژورنال: Computational Electronics
🔅 از مجموعه ژورنال های اشپرینگر
📶 ایمپکت فکتور ژورنال: 1.807
🗓 سال چاپ: 2022
💬 اعتبار ژورنال = Q2
An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage
👍3
Signed dariush_69
28 Jan 2022, 11:47 UTC≈2,360 viewsread 7 August 2026 🌀 #معرفی_مقاله
جدیدترین مقاله بنده با همکاری پروفسور علی اصغر اروجی و خانم آیدا معتمدی از دانشگاه سمنان
💢 ژورنال: Computational Electronics
🔅 از مجموعه ژورنال های اشپرینگر
📶 ایمپکت فکتور ژورنال: 1.807
🗓 سال چاپ: 2022
💬 اعتبار ژورنال = Q2
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
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7 Nov 2021, 07:40 UTC≈1,040 views2 reactionsread 7 August 2026 🌀 #معرفی_مقاله
اولین مقاله ISI خودم که به تنهایی نوشته شده است
💢 ژورنال: Silicon
🔅 از مجموعه ژورنال های اشپرینگر
📶 ایمپکت فکتور ژورنال: 2.67
🗓 سال چاپ: 2021
💬 اعتبار ژورنال = Q2
β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
👍2
Signed dariush_69
30 Oct 2021, 06:22 UTC856 viewsread 7 August 2026 🌀 #معرفی_مقاله
جدیدترین مقاله بنده با همکاری پروفسور علی اصغر اروجی و آقای مهدی خورابه از دانشگاه سمنان
💢 ژورنال: Silicon
🔅 از مجموعه ژورنال های اشپرینگر
📶 ایمپکت فکتور ژورنال: 2.67
🗓 سال چاپ: 2021
💬 اعتبار ژورنال = Q2
Improvement of a Novel SOI- MESFET with an Embedded GaN Layer for High-Frequency Operations
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30 Oct 2021, 06:19 UTC928 viewsread 7 August 2026 🌀 #معرفی_مقاله
جدیدترین مقاله بنده با همکاری پروفسور علی اصغر اروجی و آقای فرشاد قلی پور از دانشگاه سمنان
💢 ژورنال: Silicon
🔅 از مجموعه ژورنال های اشپرینگر
📶 ایمپکت فکتور ژورنال: 2.67
🗓 سال چاپ: 2021
💬 اعتبار ژورنال = Q2
A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region
Signed dariush_69
Showing the 12 most recent of 20 posts we hold for @Elecsoftwarefordesign. View and reaction counts are the latest single reading for each post, not a live figure, and a recent post is still accumulating both. A view count marked ≈ was rounded by Telegram before we ever saw it — t.me prints views in full below 1,000 and to three significant figures above, so ≈1,200,000 means somewhere between 1,150,000 and 1,249,999. Unmarked counts are exact. Text is reproduced from the public post preview and truncated for length.